? 2003 ixys all rights reserved g = gate, c = collector, e = emitter, tab = collector symbol test conditions maximum ratings v ces t j = 25 c to 150 c 600 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c60a i c90 t c = 90 c32a i cm t c = 25 c, 1 ms 120 a ssoa v ge = 15 v, t vj = 125 c, r g = 22 ? i cm = 64 a (rbsoa) clamped inductive load @ 0.8 v ces p c t c = 25 c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c m d mounting torque (m3) to-247ad 1.13/10 nm/lb.in. maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight to-247ad 6 g to-268 4 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 600 v v ge(th) i c = 250 a, v ce = v ge 2.5 5.0 v i ces v ce = 0.8 ? v ces t j = 25 c 200 a v ge = 0 v t j = 150 c 32n60b 1 ma 32n60bd1 3 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v 2.3 v hiperfast tm igbt v ces = 600 v i c25 = 60 a v ce(sat) = 2.3 v t fi(typ) = 85 ns ds98749c(02/03) c (tab) g c e to-247 ad (ixgh) to-268 (ixgt) g e c (tab) features ? international standard packages high frequency igbt and antiparallel fred in one package high current handling capability hiperfast tm hdmos tm process mos gate turn-on -drive simplicity applications uninterruptible power supplies (ups) switched-mode and resonant-mode power supplies ac motor speed control dc servo and robot drives dc choppers advantages space savings (two devices in one package) high power density suitable for surface mounting very low switching losses for high frequency applications easy to mount with 1 screw,to-247 (insulated mounting screw hole) ixgh 32n60b ixgt 32n60b ixgh 32n60bd1 ixgt 32n60bd1 (d1)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c90 ; v ce = 10 v, 15 25 s pulse test, t 300 s, duty cycle 2 % c ies 2700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 32n60b 210 pf 32n60bd1 240 pf c res 50 pf q g 110 150 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 23 35 nc q gc 40 75 nc t d(on) 25 ns t ri 20 ns t d(off) 100 200 ns t fi 80 150 ns e off 0.6 1.2 mj t d(on) 25 ns t ri 25 ns e on 32n60b 0.3 mj 32n60bd1 1.0 mj t d(off) 120 ns t fi 120 ns e off 1.2 mj r thjc 0.62 k/w r thck to-247 0.25 k/w reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = i c90 , v ge = 0 v, t j = 150 c 1.6 v pulse test, t 300 s, duty cycle d 2 % t j = 25 c 2.5 v i rm i f = i c90 , v ge = 0 v, -di f /dt = 100 a/ s6a t rr v r = 360 v t j = 125 c 100 ns i f = 1 a; -di/dt = 100 a/ s; v r = 30 v t j = 25 c25 ns r thjc 1.0 k/w inductive load, t j = 25 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 4.7 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g inductive load, t j = 125 c i c = i c90 , v ge = 15 v v ce = 0.8 v ces , r g = r off = 4.7 ? remarks: switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g ixgh 32n60b ixgh 32n60bd1 ixgt 32n60b ixgt 32n60bd1 to-247 ad (ixgh) outline dim. millimeter inches min. max. min. max. a 19.81 20.32 0.780 0.800 b 20.80 21.46 0.819 0.845 c 15.75 16.26 0.610 0.640 d 3.55 3.65 0.140 0.144 e 4.32 5.49 0.170 0.216 f 5.4 6.2 0.212 0.244 g 1.65 2.13 0.065 0.084 h - 4.5 - 0.177 j 1.0 1.4 0.040 0.055 k 10.8 11.0 0.426 0.433 l 4.7 5.3 0.185 0.209 m 0.4 0.8 0.016 0.031 n 1.5 2.49 0.087 0.102 to-268aa (d 3 pak) dim. m illimeter inches min. max. min. max. a 4.9 5.1 .193 .201 a 1 2.7 2.9 .106 .114 a 2 .02 .25 .001 .010 b 1.15 1.45 .045 .057 b 2 1.9 2.1 .75 .83 c .4 .65 .016 .026 d 13.80 14.00 .543 .551 e 15.85 16.05 .624 .632 e 1 13.3 13.6 .524 .535 e 5.45 bsc .215 bsc h 18.70 19.10 .736 .752 l 2.40 2.70 .094 .106 l1 1.20 1.40 .047 .055 l2 1.00 1.15 .039 .045 l3 0.25 bsc .010 bsc l4 3.80 4.10 .150 .161
? 2003 ixys all rights reserved t j - degrees c -50 -25 0 25 50 75 100 125 150 b v/v ge(th) - normalized 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 t j - degrees c 25 50 75 100 125 150 v ce (sat) - normalized 0.75 1.00 1.25 1.50 1.75 v ce - volts 01234567 i c - amperes 0 20 40 60 80 100 v ge - volts 345678910 i c - amperes 0 20 40 60 80 100 v ce - volts 0246810 i c - amperes 0 40 80 120 160 200 13v 11v 9v 7v v ce = 10v v ge = 15v 13v 11v 9v 7v t j = 25c v ge = 15v t j = 25c i c = 16a i c = 32a i c = 64a t j = 125c v ge(th) i c = 250a bv ces i c = 250a g32n60b p1 5v 5v v ge = 15v t j = 25c v ce - volts 01234567 i c - amperes 0 20 40 60 80 100 t j = 125c fig. 6. temperature dependence of bv dss & v ge(th) fig. 5. admittance curves fig. 3. saturation voltage characteristics fig. 4. temperature dependence of v ce(sat) fig. 1. saturation voltage characteristics fig. 2. extended output characteristics ixgh 32n60b ixgh 32n60bd1 ixgt 32n60b ixgt 32n60bd1
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 fig. 11. transient thermal resistance pulse width - seconds 0.00001 0.0001 0.001 0.01 0.1 1 z thjc (k/w) 0.001 0.01 0.1 1 d=0.2 v ce - volts 0 100 200 300 400 500 600 i c - amperes 0.1 1 10 100 q g - nanocoulombs 0 25 50 75 100 125 150 v ge - volts 0 3 6 9 12 15 r g - ohms 0 102030405060 e (off) - millijoules 0 1 2 3 4 5 e (on) - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 t j = 125c i c - amperes 0 20406080 e (off) - millijoules 0 1 2 3 4 5 e (on) - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 v ce = 300v i c = 32a i c = 32a e (on) e (off) e (on) e (off) t j = 125c r g = 4.7 ? dv/dt < 5v/ns d=0.5 d=0.1 d=0.05 d=0.02 d=0.01 single pulse d = duty cycle r g = 10 ? t j = 125c fig. 10. turn-off safe operating area fig. 9. gate charge fig. 8. dependence of tfi and e off on r g . fig. 7. dependence of tfi and e off on i c . ixgh 32n60b ixgh 32n60bd1 ixgt 32n60b ixgt 32n60bd1
? 2003 ixys all rights reserved ixgh 32n60b ixgh 32n60bd1 ixgt 32n60b ixgt 32n60bd1 200 600 1000 0 400 800 60 70 80 90 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.00 0.25 0.50 0.75 1.00 v fr di f /dt v 200 600 1000 0 400 800 0 5 10 15 20 25 30 100 1000 0 200 400 600 800 1000 0123 0 10 20 30 40 50 60 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s dsep 29-06 i f = 60a i f = 30a i f = 15a t vj = 100c v r = 300v t vj = 100c i f = 30a fig. 14 peak reverse current i rm versus -di f /dt fig. 13 reverse recovery charge q r versus -di f /dt fig. 12 forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 60a i f = 30a i f = 15a q r i rm fig. 15 dynamic parameters q r , i rm versus t vj fig. 16 recovery time t rr versus -di f /dt fig. 17 peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 18 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.502 0.0052 2 0.193 0.0003 3 0.205 0.0162 t vj =25c t vj =100c t vj =150c
|
